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回收K4T1G084收购138-6133-6231
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产品属性:

价格:¥30 元 980 
供货总量:98798 
所在地:江苏苏州市 
产品规格:BGA 
包装说明:原装 
品牌:三星 
 

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回收K4T1G084     138-6133-6231(同步微信)求购K4T1G084     ,收购K4T1G084     QQ:267-066-5152(同步邮箱)回收三星1G内存   李强

? JEDEC standard 1.8V ± 0.1V Power Supply? VDDQ = 1.8V ± 0.1V? 200 MHz fCK for 400Mb/sec/pin, 267MHz fCK for 533Mb/sec/pin, 333MHz fCK for 667Mb/sec/pin? 8 Banks? Posted CAS? Programmable CAS Latency: 3, 4, 5? Programmable Additive Latency: 0, 1 , 2 , 3 and 4? Write Latency(WL) = Read Latency(RL) -1? Burst Length: 4 , 8(Interleave/nibble sequential)? Programmable Sequential / Interleave Burst Mode? Bi-directional Differential Data-Strobe (Single-ended datastrobeis an optional feature)? Off-Chip Driver(OCD) Impedance Adjustment? On Die Termination? Special Function Support-PASR(Partial Array Self Refresh)-50ohm ODT-High Temperature Self-Refresh rate enable? Average Refresh Period 7.8us at lower than TCASE 85°C,3.9us at 85°C < TCASE < 95 °C? Package: 68ball FBGA - 256Mx4/128Mx8 , 84ball FBGA -64Mx16? All of Lead-free products are compliant for RoHSThe 1Gb DDR2 SDRAM is organized as a 32Mbit x 4 I/Os x 8banks, 16Mbit x 8 I/Os x 8banks or 8Mbit x 16 I/Os x 8 banksdevice. This synchronous device achieves high speed doubledata-ratetransfer rates of up to 667Mb/sec/pin (DDR2-667) forgeneral applications.The chip is designed to comply with the following key DDR2SDRAM features such as posted CAS with additive latency, writelatency = read latency - 1, Off-Chip Driver(OCD) impedanceadjustment and On Die Termination.All of the control and address inputs are synchronized with a pairof externally supplied differential clocks. Inputs are latched at thecrosspoint of differential clocks (CK rising and CK falling). All I/Osare synchronized with a pair of bidirectional strobes (DQS andDQS) in a source synchronous fashion. The address bus is usedto convey row, column, and bank address information in a RAS/CAS multiplexing style. For example, 1Gb(x4) device receive 14/11/3 addressing.The 1Gb DDR2 device operates with a single 1.8V ± 0.1V powersupply and 1.8V ± 0.1V VDDQ.The 1Gb DDR2 device is available in 68ball FBGAs(x4/x8) and in84ball FBGAs(x16).Note: The functionality described and the timing specificationsincluded in this data sheet are for the DLL Enabled mode of operation.

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电话: 86-0512-61336231
手机: 13861336231

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